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部署・役職名 | Memory Design Engineer and Manager |
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職種 | |
業種 | |
勤務地 | |
仕事内容 |
*SRAM architecture design *Read and write critical path design and analysis *Design of key building blocks (sensing, analog, high voltage, DFT) *Chip-level design verification *Embedded non-volatile memory compiler and productization *Co-work with product/reliability engineer on silicon characterization and reliability qualification |
応募資格 |
【必須(MUST)】 *The candidates should have at least bachelor degree with 10 years of experiences, master degree with 3 years of experience or PhD degree in relevant field.*Memory experts in the field of SRAM. *Familiar with bit cell characteristics (Vmin, bit cell performance, write margin), sense amplifier design, high sigma variation analysis, race check, margin signoff. *Knowledge on high speed and low Vmin design is a plus. *English is a plus Personal Attributes: *Self-motivated in learning and problem-solving * Good communication skill and a good team player * Strong ownership and commitment |
更新日 | 2020/05/11 |
求人番号 | 1180810 |
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